IRFBG30 1000V 3.1A N CHANNEL POWER MOSFET TO-220 IRFBG30PBF
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB co.
The IRF BG30 MOSFET is a high-voltage, low-current N-Channel power transistor, designed for switching applications, industrial electronics, and power supplies.
With an impressive 1000V voltage rating and 3A current handling capacity, this MOSFET is ideal for high-voltage circuits that require efficient power management and reliable switching.
Designed for high-voltage applications, ensuring stable and efficient performance.
Minimizes power loss, improving overall circuit performance.
Ensures quick response times, making it suitable for switch-mode power supplies and industrial converters.
The MOSFET BG30 is designed with a robust TO-220 package, allowing better thermal management and increased durability.
Ideal for power conversion systems, high-voltage regulators, industrial automation, and inverter circuits.
FEATURES
Dynamic dV/dt rating
Repetitive avalanche-rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance