50T65FD1 TO3P SGT50T65FD1PN IGBT 650V 50A MOSFET Transistor


The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.


Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.


Features:
Manufacturer: Fairchild Semiconductor
Product Category: IGBT Transistors
RoHS: RoHS Compliant Details
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current : 50 A
Continuous Collector Current at 25 C: 80 A
Mounting Style: Through Hole
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: – 55 C